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Analog Electronics
INTRODUCTION TO SEMICONDUCTORS
TYPES OF MATERIAL & their COMPARISON
TEMPERATURE EFFECT ON MATERIALS
ATOMIC STRUCTURE OF SEMICONDUCTORS
P-TYPE SEMICONDUCTOR
N-TYPE SEMICONDUCTOR
MASS ACTION LAW
DIODES
MAKING OF DIODE
DIFFERENT FORCES ACTING ON CHARGE CARRIERS
DEPLETION WIDTH VARIATION with DOPING
CONNECTING BOTH ENDS OF DIODE
FORWARD BIASING DIODE
TRANSISTOR

 

 

Charge distribution of diode in normal (un-biased) state

Apply the relation given below

                                n * p = ni2 at constant temperature    (Mass action law)

Now we apply the above relation to p-type:

p i.e. the concentration of majority carriers (holes) is larger as doping of p-side is high and we have the value of ni2as constant at fixed temperature. Hence from the above relation we find that number of minority carriers ( electrons) is less in p-type material while as doping of n-side is normal, hence number of majority carriers (i.e. electrons) in n-side is not large with the value of ni2as constant and hence number of minority carriers is larger as compared to that in p-side. We depict the above as below:

Npo is defined as the concentration of minority carriers in N-type material i.e. holes and Pno is defined as the concentration of minority carriers in P-type material i.e. electrons when diode is in un-biased state (i.e. diode is neither forward biased or reverse biased).

 

 

 

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