Charge distribution of diode in Forward Biased state
When diode is forward biased, the majority carriers of both sides cross the junction and after reaching the other side, the charge carriers start combining. So holes from p-side start moving towards n-side and electrons from n-side start moving to p-side. When holes enter the n-side they become the minority carriers and just at the junction there would be high concentration of holes in n-side as the recombining has just started. Also all the holes can not recombine at the junction. Hence when we move away from the junction in the n-side, the concentration of holes is decreasing as more and more holes are recombining. This is also shown in the figure below. Similarly in the p-side, concentration of the electrons is high near the junction and it starts decreasing as we move away from the junction in the p-side.
The red curve shows the level of concentration of minority carriers at different distances on the both sides of junction and the shaded blue part shows the increase in the concentration of minority carriers after forward biasing the diode. There is a difference in the peak level of minority carriers as we have the difference in the doping level of both sides.