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Analog Electronics
INTRODUCTION TO SEMICONDUCTORS
TYPES OF MATERIAL & their COMPARISON
TEMPERATURE EFFECT ON MATERIALS
ATOMIC STRUCTURE OF SEMICONDUCTORS
P-TYPE SEMICONDUCTOR
N-TYPE SEMICONDUCTOR
MASS ACTION LAW
DIODES
MAKING OF DIODE
DIFFERENT FORCES ACTING ON CHARGE CARRIERS
DEPLETION WIDTH VARIATION with DOPING
CONNECTING BOTH ENDS OF DIODE
FORWARD BIASING DIODE
TRANSISTOR

 

 

Charge distribution of diode in Reverse Biased state

When we reverse biase any diode, the minority carriers from both sides cross the junction and then recombine after reaching the other side. Hence the holes from n-side move towards p-side and after reaching p-type material become majority carriers. These holes combine with minority carriers of p-side i.e. electrons. So the minority carriers at junction i.e. holes in the n-side which are near junction would immediately cross the junction on reverse biase and other holes move slowly. Similar to the above, electrons of p-side move to n-side. Hence the concentration of minority carriers falls on both sides as shown below:

 

 

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