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Analog Electronics
INTRODUCTION TO SEMICONDUCTORS
TYPES OF MATERIAL & their COMPARISON
TEMPERATURE EFFECT ON MATERIALS
ATOMIC STRUCTURE OF SEMICONDUCTORS
P-TYPE SEMICONDUCTOR
N-TYPE SEMICONDUCTOR
MASS ACTION LAW
DIODES
MAKING OF DIODE
DIFFERENT FORCES ACTING ON CHARGE CARRIERS
DEPLETION WIDTH VARIATION with DOPING
CONNECTING BOTH ENDS OF DIODE
FORWARD BIASING DIODE
TRANSISTOR

 

 

DIFFERENT FORCES ACTING ON CHARGE CARRIERS

So we can say there are two types of forces that exit to the electrons of n-type and holes of p-type as shown:

FE1 is force acting on electrons due to electric field.

FE2 is force acting on holes due to electric field.

Hence we call that there is barrier at the junction and to cross that barrier, there has to be some extra energy supplied to the mobile charge carriers & this extra energy can supplied by applying forward biased voltage. 

Let’s now discuss the different forces acting on the charge carriers (majority carriers):

FE1 is force acting on electrons (in p-type) due to electric field.

FE2 is force acting on holes (in n-type) due to electric field.

FA1 is force acting on electrons (in p-type) due to hole-electron attraction.

FA2 is force acting on holes (in n-type) due to hole-electron attraction.

 

The forces satisfy FE1 > FA1 & FE2 > FA2 and hence holes & electrons are not able to cross the barrier.

 

 

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