When the polarity of the external voltage source is opposite to the above case i.e. when positive terminal is connected to n-side and negative terminal to p-side, then diode is said to be reverse biased as shown below: When we reverse bias the diode, the majority carriers have again 3 types of forces acting on […]
Tag: electric field
Diode: Forward Biasing
When we apply voltage across the diode, as shown below: When the voltage applied across the diode is greater than the barrier voltage, the electrons and the holes present in the n-type and the p-type regions of the diode acquire enough energy to cross the barrier at the junction. Now if we talk in […]
Connecting both ends of Diode
Q- Would there be any current flow when we connect both ends of a diode and can we measure it using multimeter? Ans: Well when we connect both sides of a diode, it is actually the same case when we connect the n-type and p-type material at the junction. There would be diffusion of charges i.e. […]
Diode: Depletion region vs Doping
Q: How does the width of depletion region vary with change in doping of two regions? Ans: As we have already discussed how depletion region is formed and now we know that depletion region is formed when recombining of electrons and holes occur. We discuss different cases as follow: Doping of only p-type is greater: […]
Diode: Different Acting Forces
DIFFERENT FORCES ACTING ON CHARGE CARRIERS So we can say there are two types of forces that exit to the electrons of n-type and holes of p-type as shown: FE1 is force acting on electrons due to electric field. FE2 is force acting on holes due to electric field. Hence we call that there is barrier at […]