Analog Electronics

Diode: Doping effect on reverse recovery time

As we have already known that reverse recovery time is the time it takes to invert the minority charge distribution of diode from forward biase to minority charge distribution in reverse biase. Hence when we increase the doping of material, the concentration fo minority charge carriers decrease. Hence as the peaks of charge distribution have fallen, it takes lesser time to invert the charge distribution. Hence we can say that with increase in doping, the reverse recovery time decrease and with decrease in doping level the reverse recovery time increases.

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